TY - CONF T1 - Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes JO - SILICON CARBIDE AND RELATED MATERIALS 2008 PY - 2009/01/01 AU - Loh WS AU - David JPR AU - Ng BK AU - Soloviev SI AU - Sandvik PM AU - Ng JS AU - Johnson CM ED - PerezTomas A ED - Godignon P ED - Vellvehi M ED - Brosselard P VL - 615-617 SP - 311 EP - 314 Y2 - 2025/06/26 ER -