TY - JOUR T1 - Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature JO - Semiconductor Science and Technology UR - http://eprints.whiterose.ac.uk/146062/ PY - 2018/08/20 AU - Richards RD AU - Rockett TB AU - Nawawi MR AU - Harun F AU - Mellor A AU - Wilson T AU - Christou C AU - Chen S AU - David JPR ED - DO - DOI: 10.1088/1361-6641/aad72a VL - 33 IS - 9 Y2 - 2025/05/20 ER -