TY - CONF T1 - Novel dual gated lateral MOS-Bipolar power device JO - IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) PY - 1999/01/01 AU - Hardikar S AU - Sankara Narayanan EM AU - De Souza MM AU - Huang AQ AU - Amaratunga G ED - SP - 261 EP - 264 Y2 - 2025/05/17 ER -