TY  - JOUR

T1  - InAs n-i-p Diodes Fabricated Using S and Si Ion Implantation

JO  - IEEE Transactions on Electron Devices

UR  - https://doi.org/10.1109/ted.2025.3580394

PY  - 2025/06/27

AU  - Blain T

AU  - Veitch J

AU  - Shulyak V

AU  - Han IS

AU  - Hopkinson M

AU  - Ng JS

AU  - Tan CH

ED  - 

DO  - DOI: 10.1109/ted.2025.3580394

PB  - Institute of Electrical and Electronics Engineers (IEEE)

SP  - 1

EP  - 6

Y2  - 2025/07/03

ER  -