TY - JOUR T1 - Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy JO - J APPL PHYS PY - 2005/01/01 AU - Bollet F AU - Gillin WP AU - Hopkinson M AU - Gwilliam R ED - DO - DOI: 10.1063/1.1825613 VL - 97 IS - 1 Y2 - 2025/07/09 ER -