TY - CONF
T1 - Edge effect under temperature bias stress of 0.18 mu m PMOS technology
JO - 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2
PY - 2004/01/01
AU - Sekhar DC
AU - Ray PP
AU - De Souza MM
AU - Chaparala P
AU - ieee
ED -
SP - 645
EP - 648
Y2 - 2025/05/21
ER -