TY - JOUR T1 - Raman scattering by GaInAs-InP quantum wells: effects of free carriers and impurities JO - Semiconductor Science and Technology PY - 1987/12/01 AU - Mowbray DJ AU - Hayes W AU - Bland JAC AU - Skolnick MS AU - Bass SJ ED - DO - DOI: 10.1088/0268-1242/2/12/011 PB - IOP Publishing VL - 2 IS - 12 SP - 822 EP - 827 Y2 - 2025/05/27 ER -